ti.\*:("The Proceedings of the 18th American Conference on Crystal Growth and Epitaxy (ACCGE-18 OMVPE-15), Monterey, CA, USA, 31 July - 05 August, 2011")
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The Proceedings of the 18th American Conference on Crystal Growth and Epitaxy (ACCGE-18 OMVPE-15), Monterey, CA, USA, 31 July - 05 August, 2011QIU, S. Roger; BHAT, Raj; CANEAU, Catherine et al.Journal of crystal growth. 2012, Vol 352, Num 1, issn 0022-0248, 266 p.Conference Proceedings
Characterization of nanocrystalline cobalt doped TiO2 sol―gel materialKIRIT, Siddhapara; DIMPLE, Shah.Journal of crystal growth. 2012, Vol 352, Num 1, pp 224-228, issn 0022-0248, 5 p.Conference Paper
Uniformity improvement of selectively-grown InGaAs micro-discs on SiSUGIYAMA, Masakazu; KONDO, Yoshiyuki; TAKENAKA, Mitsuru et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 229-234, issn 0022-0248, 6 p.Conference Paper
AlInN MOVPE: growth chemistry and analysis of trendsLOBANOVA, A. V; SEGAL, A. S; YAKOVLEV, E. V et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 199-202, issn 0022-0248, 4 p.Conference Paper
Growth and characterization of Hexakis(thiourea)nickel(II) nitrate crystalsMUTHU, K; MEENAKASHISUNDARAM, S. P.Journal of crystal growth. 2012, Vol 352, Num 1, pp 158-162, issn 0022-0248, 5 p.Conference Paper
Multiwafer zinc diffusion in an OMVPE reactorPITTS, O. J; BENYON, W; GOODCHILD, D et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 249-252, issn 0022-0248, 4 p.Conference Paper
Radial and axial impurity distribution in high-purity germanium crystalsGANG YANG; GUOJIAN WANG; WENCHANG XIANG et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 43-46, issn 0022-0248, 4 p.Conference Paper
Crystal growth and characterization of 9,10-diphenylanthraceneLOEF, Edgar V. Van; MUKHOPADHYAY, Sharmistha; ZAITSEVA, Natalia et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 103-105, issn 0022-0248, 3 p.Conference Paper
Imaging transport in nanowires using near-field detection of lightHAEGEL, N. M; CHISHOLM, D. J; COLE, R. A et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 218-223, issn 0022-0248, 6 p.Conference Paper
New single crystal scintillators: CsCaCl3:Eu and CsCaI3:EuZHURAVLEVA, Mariya; BLALOCK, Bonnie; KAN YANG et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 115-119, issn 0022-0248, 5 p.Conference Paper
Crystal growth and characterization of alkali-earth halide scintillatorsBOURRET-COURCHESNE, E. D; BIZARRI, G. A; BORADE, R et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 78-83, issn 0022-0248, 6 p.Conference Paper
Crystal growth, structure and characterization of p-Toluidinium picrateMUTHU, K; MEENAKSHISUNDARAM, Subbiah.Journal of crystal growth. 2012, Vol 352, Num 1, pp 163-166, issn 0022-0248, 4 p.Conference Paper
Development of large size high-purity germanium crystal growthGUOJIAN WANG; YONGCHEN SUN; GANG YANG et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 27-30, issn 0022-0248, 4 p.Conference Paper
The influence of core geometry on the crystallography of silicon optical fiberMORRIS, Stephanie; MCMILLEN, Colin; HAWKINS, Thomas et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 53-58, issn 0022-0248, 6 p.Conference Paper
Overgrowth of GaN on GaN nanowires produced by mask-less etchingFRAJTAG, P; HOSALLI, A. M; SAMBERG, J. P et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 203-208, issn 0022-0248, 6 p.Conference Paper
2 inch diameter single crystal growth and scintillation properties of Ce:Gd3Al2Ga3O12KAMADA, Kei; YANAGIDA, Takayuki; ENDO, Takanori et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 88-90, issn 0022-0248, 3 p.Conference Paper
Impurity incorporation in orientation patterned GaAs grown by low pressure HVPESNURE, M; JIMENEZ, J; HORTELANO, V et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 258-261, issn 0022-0248, 4 p.Conference Paper
High growth rate MOVPE of Al(Ga)N in planetary reactorLUNDIN, W. V; NIKOLAEV, A. E; YAGOVKINA, M. A et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 209-213, issn 0022-0248, 5 p.Conference Paper
Laser heated pedestal growth of potassium lithium niobate for UV generationMAXWELL, Gisele; PETERSEN, Alan; DALTON, Dylan et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 59-62, issn 0022-0248, 4 p.Conference Paper
Structural defects and microindentation analysis of zone melted Bi2Te3―xSex whiskersJARIWALA, Bhakti; SHAH, Dimple V.Journal of crystal growth. 2012, Vol 352, Num 1, pp 143-146, issn 0022-0248, 4 p.Conference Paper
A comparison of the effect of Ca2+ codoping in cerium doped GSO with that of LSO and YSOKOSCHAN, M; YANG, K; ZHURAVLEVA, M et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 133-136, issn 0022-0248, 4 p.Conference Paper
Calcite growth-rate inhibition by fulvic acid and magnesium ion—Possible influence on biogenic calcite formationREDDY, Michael M.Journal of crystal growth. 2012, Vol 352, Num 1, pp 151-154, issn 0022-0248, 4 p.Conference Paper
On the role of thermal gradient related stress in intrinsic defect formation during single crystal silicon growth from the meltVANHELLEMONT, Jan.Journal of crystal growth. 2012, Vol 352, Num 1, pp 21-26, issn 0022-0248, 6 p.Conference Paper
Progress in large area organometallic vapor phase epitaxy for III―V multijunction photovoltaicsFETZER, C. M; LIU, X. Q; CHANG, J et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 181-185, issn 0022-0248, 5 p.Conference Paper
Single crystal growth of Ga2(SexTe1―x)3 semiconductors and defect studies via positron annihilation spectroscopyABDUL JABBAR, N. M; BOURRET-COURCHESNE, E. D; WIRTH, B. D et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 31-34, issn 0022-0248, 4 p.Conference Paper
